PART |
Description |
Maker |
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
43045-1208 43045-1806 43045-1608 43045-2406 43045- |
Header; No. of Contacts:12; Pitch Spacing:3mm; No. of Rows:2; Series:Micro-Fit; Connector Body Material:Polymer; Mounting Type:PC Board; Terminal Type:Right Angle Surface Mount RoHS Compliant: Yes POWER CONNECTOR 430451806 POWER CONNECTOR 430451608 POWER CONNECTOR Microfit 3.0 RA SMT/Clip DR Tin 24 Ckt POWER CONNECTOR 430450206 POWER CONNECTOR
|
Molex, Inc.
|
FSB147HNY |
Meets 2013 ErP Standby Power Regulation (Less than 0.5 W Consumption with 0.25 W Load) for ATX Power and LCD TV Power
|
List of Unclassifed Manufacturers
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
ATMEGA103-14 |
AVR ?High-performance and Low-power RISC Architecture Power Consumption when Using Slowly Rising Power Supply
|
ATMEL Corporation
|
2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
TB2959HQ |
Maximum Power 47W BTL 4-ch Audio Power IC Power amplifier ICs
|
Toshiba Semiconductor
|
2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD2659 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|